BTA316-800CT データシートの表示（PDF） - WeEn Semiconductors
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BTA316-800CT Datasheet PDF : 12 Pages
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WeEn Semiconductors
Symbol Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 18 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/μs; gate open circuit;
snubberless condition
BTA316-800CT
3Q Triac
Min Typ Max Unit
2
-
35
mA
2
-
35
mA
2
-
35
mA
-
-
35
mA
-
1.3
1.5
V
500 -
-
V/μs
200 -
-
V/μs
8
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
Simplified outline
mb
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
Graphic symbol
T2
T1
G
sym051
123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BTA316-800CT
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
BTA316-800CT
BTA316-800CT
Product data sheet
Marking codes
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
26 September 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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