MBF110PFW1STG データシートの表示（PDF） - Fujitsu

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MBF110PFW1STG

Solid-State Fingerprint Sensor

Fujitsu 

MBF110

DCR

SETCUR

A [3:0]

RAH

RAL

300 x 300

Sensor Arrays

CE1

SELECT

CE2

LOGIC

RD

CAH

CAL

MUX

Temperature

Sensor

WR

D[7:0]

DATA

BUS

BUFFER

RSR

DTR

8 Bit A/D

Resistance

Sensor

inary CONTROL LOGIC

RSENSE

TEST

XTAL1

m XTAL2

Chip Operation Preli ENCLK

OSCILLATOR

CLK OUT

CLK

Figure 1. MBF110 Block Diagram

measure of the capacitance of a sensor cell.After the row capture, the

cells within the row are ready to be digitized.

The sensor array is composed of 300 rows and 300 columns of sensor

plates. Associated with each column are two sample-and-hold

circuits.A fingerprint image is sensed or captured one row at a time.

This“row capture”occurs in two phases. In the first phase, the

sensor plates of the selected row are pre-charged to theVDD voltage.

During this pre-charge period, an internal signal enables the first set

of sample-and-hold circuits to store the pre-charged plate voltages of

The sensitivity of the chip is adjusted by changing the discharge

current and discharge time.The nominal value of the current source

is controlled by an external resistor connected between the SETCUR

pin and ground.The current source is controlled from the Discharge

Current Register (DCR). The discharge time is controlled by the

Discharge Time Register (DTR).

the row.

The sensor array is a row-oriented device. Images are read out one

In the second phase, the row of sensor plates is discharged with a

current source. The rate at which a cell is discharged is proportional

to the“discharge current.”After a period of time (referred to as the

“discharge time”), an internal signal enables the second set of

sample-and-hold circuits to store the final plate voltages. The

difference between the pre-charged and discharged plate voltages is a

row at a time.The High-Order RowAddress Register (RAH) and the

Low-Order Row Address Register (RAL) must be programmed to

select a row to be captured. Writing to RAL initiates a row capture.

The capture time is a function of the external clock and the DTR.

After the discharge cycle, the outputs of the row elements will be

stored in analog sample and hold circuits.

Fujitsu Microelectronics, Inc. 1

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