15T65PEH データシートの表示（PDF） - MagnaChip Semiconductor
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15T65PEH Datasheet PDF : 8 Pages
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MBF15T65PEH
650V Field Stop IGBT
General Description
Features
This IGBT is produced using advanced MagnaChip’s Field Stop
Trench IGBT Technology, which provides high performance, excellent
quality and high ruggedness.
This device is for motor control.
High ruggedness for motor control
VCE(sat) positive temperature coefficient
Very soft, fast recovery anti-parallel diode
Low EMI
Maximum junction temperature 175°C
Applications
Inverter for motor control
TO-220F
GC
E
Package outline and symbol
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
Pulsed collector current, tp limited by Tvjmax
Diode forward current, limited by Tvjmax
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
Power dissipation
Short circuit withstand time
VCC ≤ 360V, VGE = 15V, Tvj = 150°C
Operating Junction temperature range
Storage temperature range
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Symbol
VCE
IC
ICpuls
IF
IFpuls
VGE
PD
tsc
Tvj
Tstg
Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
G : Gate
C : Collector
E : Emitter
Rating
650
30
15
60
30
15
60
±20
48
24
5
-40~175
-55~150
Rating
62
3.0
5.0
Unit
V
A
A
A
A
A
V
W
W
μs
°C
°C
Unit
°C/W
Apr. 2017. Version 1.0
1
MagnaChip Semiconductor Ltd.
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