ISCSM99P データシートの表示（PDF） - Inchange Semiconductor
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ISCSM99P Datasheet PDF : 2 Pages
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Schottky Barrier Rectifier
ISCSM99P
FEATURES
·Low forward voltage
·Guarding for stress protection
·150℃ operating junction temperature
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in low voltage,high frequency inverters,free
wheeling and polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
45
V
IF(AV)
IFSM
TJ
Average Rectified Forward Current
30
A
Peak Forward Surge Current, 8.3 ms single
halfsine-wave superimposed on rated load 300
A
(JEDEC method)
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
HERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX UNIT
1.4
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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