1S2076A データシートの表示（PDF） - Electronics Industry

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1S2076A

HIGH SPEED SWITCHING DIODE

Electronics Industry 

www.eicsemi.com

1S2076A

PRV : 70 Volts

Io : 150 mA

FEATURES :

* Silicon Epitaxial Planar Diode

* High reliability

* Low reverse current

* Low forward voltage drop

* High speed switching

* Pb / RoHS Free

MECHANICAL DATA :

* Case : DO-35 Glass Case

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.13 gram (approximately)

HIGH SPEED SWITCHING DIODE

DO - 35

0.079(2.0 )max.

0.020 (0.52)max.

1.00 (25.4)

min.

0.150 (3.8)

max.

1.00 (25.4)

min.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum Reverse Voltage

Maximum Average Forward Current

Maximum Non-Repetitive Peak Forward Current (t < 1s)

Maximum Power Dissipation , Ta = 25 °C

Maximum Forward Voltage at IF = 10 mA

Maximum Reverse Current

at VR = 30V

Maximum Reverse Recovery Time

(IF = 10mA, VR = 6V , RL = 50Ω)

Maximum Capacitance Between Lead

(VR = 1 V, f = 1MHz)

Junction Temperature Range

Storage Temperature Range

SYMBOL

VRRM

VR

IF(AV)

IFSM

PD

VF

IR

Trr

C

TJ

TSTG

VALUE

70

60

150

1.0

250

0.8

100

4.0

3.0

175

- 65 to + 175

UNIT

V

V

mA

A

mW

V

nA

ns

pF

°C

°C

Page 1 of 2

Rev. 02 : March 25, 2005

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