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B5818WS_ データシートの表示(PDF) - Galaxy Semi-Conductor
部品番号
コンポーネント説明
メーカー
B5818WS_
Schottky Barrier Diode
Galaxy Semi-Conductor
B5818WS_ Datasheet PDF : 4 Pages
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Production specification
Schottky Barrier Diode
B5818WS-B5819WS
ELECTRICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
Parameter
Reverse breakdown voltage
Symbol Test Condition
V
(BR)
I
R
=1mA
Reverse voltage leakage current I
R
Forward voltage
V
F
V
R
=30V
V
R
=40V
B5818WS
B5819WS
Diode capacitance
C
D
V
R
=4V,f=1MHz
MIN MAX UNIT
B5818WS 30
B5819WS 40
B5818WS
B5819WS
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
V
1 mA
0.55
V
0.875
0.6
V
0.9
120
pF
TYPICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
Case Temperature(
℃
)
Number of Cycles at 60Hz
B009
Rev.A
www.gmesemi.com
2
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