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B5818W データシートの表示(PDF) - Galaxy Semi-Conductor
部品番号
コンポーネント説明
メーカー
B5818W
Schottky Barrier Diode
Galaxy Semi-Conductor
B5818W Datasheet PDF : 4 Pages
1
2
3
4
BL
Galaxy Electrical
Production specification
Schottky Barrier Diode
B5817W-B5819W
ELECTRICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
Parameter
Symbol Test Condition
MIN
Reverse breakdown voltage
V
(BR)
I
R
=1mA
B5817W 20
B5818W 30
B5819W 40
Reverse voltage leakage current I
R
V
R
=20V
V
R
=30V
V
R
=40V
B5817W
B5818W
B5819W
B5817W
I
F
=1A
I
F
=3A
Forward voltage
Diode capacitance
B5818W
V
F
I
F
=1A
I
F
=3A
B5819W
I
F
=1A
I
F
=3A
C
D
V
R
=4V,f=1MHz
MAX UNIT
V
1
mA
0.45
0.75
0.55
V
0.875
0.6
0.9
120
pF
TYPICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
Document number: BL/SSSKA006
Rev.A
www.galaxycn.com
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