BTD1857A3 データシートの表示（PDF） - Cystech Electonics Corp.

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BTD1857A3

Silicon NPN Epitaxial Planar Transistor

Cystech Electonics Corp. 

CYStech Electronics Corp.

Silicon NPN Epitaxial Planar Transistor

Spec. No. : C855A3

Issued Date : 2004.12.23

Revised Date : 2005.04.29

Page No. : 1/4

BTD1857A3

Description

• High BVCEO

• High current capability

• Complementary to BTB1236A3

• Pb-free package

Symbol

BTD1857A3

Outline

TO-92

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation @TA=25℃

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

ICP

PD

Tj

Tstg

BTD1857A3

ECB

Limits

Unit

180

V

180

V

5

V

1.5

A

3

A

750

mW

150

°C

-55~+150

°C

CYStek Product Specification

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