STN2222ASF データシートの表示（PDF） - AUK -> KODENSHI CORP

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STN2222ASF

NPN Silicon Transistor

AUK -> KODENSHI CORP 

STN2222ASF

Absolute maximum ratings

Characteristic

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Collector dissipation

Junction temperature

Storage temperature

* : Package mounted on 99.5% Alumina 10×8×0.1

Symbol

VCBO

VCEO

VEBO

IC

PC*

Tj

Tstg

Ratings

60

40

5

600

350

150

-55~150

(Ta=25°C)

Unit

V

V

V

mA

mW

°C

°C

Electrical Characteristics

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

DC current gain

Collector-Emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

BVCBO

BVCEO

BVEBO

ICBO

hFE

VCE(sat)

fT

Cob

Test Condition

IC=10µA, IE=0

IC=10mA, IB=0

IE=10µA, IC=0

VCB=60V, IE=0

VCE=10V, IC=10mA

IC=150mA, IB=15mA

VCE=20V, IC=20mA

VCB=10V, IE=0, f=1MHz

(Ta=25°C)

Min. Typ. Max. Unit

60

-

-

V

40

-

-

V

5

-

-

V

-

-

10

nA

75

-

-

-

0.4

V

250 -

-

MHz

-

6.0

-

pF

KST-2071-000

2

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