MMBT4401-G データシートの表示（PDF） - ComChip
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MMBT4401-G Datasheet PDF : 6 Pages
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General Purpose Transistor
Electrical Characteristics (@TA=25°C unless otherwise noted)
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Base cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
Conditions
V(BR)CBO
IC=100μA, IE=0
V(BR)CEO
IC=1mA, IB=0
V(BR)EBO
IE=100μA, IC=0
ICEO
VCE=30V, IB=0
ICBO
VCB=50V, IE=0
IEBO
VEB=5V, IC=0
hFE
VCE=1V, IC=150mA
VCE(sat)
IC=150mA, IB=15mA
VBE(sat)
IC=150mA, IB=15mA
VCE=10V, IC=20mA
fT
f=100MHz
td
VCC=30V, VBE(off)=-2V,
IC=150mA, IB1=15mA
tr
tS
VCC=30V, IC=150mA
IB1=IB2=15mA
tf
Min.
60
40
6
100
250
Max.
100
100
100
300
0.4
0.95
15
20
225
30
Units
V
V
V
nA
nA
nA
V
V
MHz
nS
nS
nS
nS
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR32
REV:B
Page 2
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