MMBT2222A データシートの表示（PDF） - Bytes

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MMBT2222A

TRANSISTOR (NPN)

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MMBT2222A

TRANSISTOR (NPN)

FEATURES

Epitaxial planar die construction

Complementary PNP Type available(MMBT2907A)

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO

VCEO

VEBO

IC

PC

RθJA

TJ

Tstg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

75

40

6

600

300

417

150

-55to+150

Units

V

V

V

mA

mW

℃/W

℃

℃

SOT-23

1．BASE

2．EMITTER

3．COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay time

Rise time

Storage time

Fall time

Symbol

Test conditions

Min

Typ

V(BR)CBO IC= 10μA, IE=0

75

V(BR)CEO* IC= 10mA, IB=0

40

V(BR)EBO IE=10μA, IC=0

6

ICBO

VCB=60V, IE=0

ICEX

VCE=30V, VBE(off)=3V

IEBO

VEB= 3V, IC=0

hFE(1) *

VCE=10V, IC= 150mA

100

hFE(2)

VCE=10V, IC= 0.1mA

40

hFE(3) *

VCE=10V, IC= 500mA

42

VCE(sat) *

IC=500 mA, IB= 50mA

IC=150 mA, IB=15mA

VBE(sat) *

IC=500 mA, IB= 50mA

IC=150 mA, IB=15mA

VCE=20V, IC= 20mA,

fT

f=100MHz

300

td

VCC=30V, VBE(off)=-0.5V

tr

IC=150mA , IB1= 15mA

tS

VCC=30V, IC=150mA

tf

IB1=-IB2=15mA

*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

Max Unit

V

V

V

0.01

µA

0.01

µA

0.1

µA

300

1

0.3

V

2.0

1.2

V

MHz

10

nS

25

nS

225

nS

60

nS

http://www.bytesonic.com

Version 1.0

2017/5/15

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