S9013W-SOT-323 データシートの表示（PDF） - Jiangsu High diode Semiconductor Co., Ltd

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S9013W-SOT-323

SOT-323 Plastic-Encapsulate Transistors

Jiangsu High diode Semiconductor Co., Ltd 

S9013W

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR( NP N )

Features

● High Collector Current

● Excellent HFE Linearity

SOT- 3 23

C

E

Symbol

VCBO

VCEO

VEBO

IC

PC

RΘJA

Tj

Tstg

Parameter

Value

Collector-Base Voltage

40

Collector-Emitter Voltage

25

Emitter-Base Voltage

5

Collector Current

0.5

Collector Power Dissipation

200

Thermal Resistance From Junction To Ambient

625

Junction Temperature

150

Storage Temperature

-55～+150

Unit

V

V

V

A

mW

℃/W

℃

℃

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE

VCE(sat)

VBE(sat)

VBE

fT

Cob

Test conditions

IC=100µA, IE=0

IC=1mA, IB=0

IE=100µA, IC=0

VCB=40V, IE=0

VCE=20V, IB=0

VEB=5V, IC=0

VCE=1V, IC=50mA

IC=500mA, IB=50mA

IC=500mA, IB=50mA

VCE=1V, IC=10mA

VCE=6V,IC=20mA , f=30MHz

VCB=6V, IE=0, f=1MHz

B

C

B

E

Min

Typ

Max Unit

40

V

25

V

5

V

100

nA

100

nA

100

nA

120

400

0.6

V

1.2

V

0.7

V

150

MHz

8

pF

CLASSIFICATION OF hFE

RANK

RANGE

MARKING

L

120–200

H

200–350

J3

J

300–400

High Diode Semiconductor

1

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