S8050 データシートの表示（PDF） - MAKO SEMICONDUCTOR CO.,LIMITED

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S8050

SOT-23 Plastic-Encapsulate Transistors

MAKO SEMICONDUCTOR CO.,LIMITED 

MAKO SEMICONDUCTOR CO.,LIMITED

SOT-23 Plastic-Encapsulate Transistors

S8050 TRANSI STOR (NPN)

SOT-23

FEATURES

z Complimentary to S8550

M z Collector Current: IC=0.5A

AKO MARKING: J3Y/D9D/

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

S Symbol

Parameter

E VCBO

Collector-Base Voltage

MI VCEO

Collector-Emitter Voltage

C VEBO

Emitter-Base Voltage

O IC

Collector Current -Continuous

N PC

Collector Dissipation

DU Tj

Junction Temperature

C Tstg

Storage Temperature

TOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Value

40

25

5

0.5

0.3

150

-55-150

Unit

V

V

V

A

W

℃

℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Symbol

Test conditions

CO V(BR)CBO

IC= 100μA, IE=0

., V(BR)CEO = IC=1mA, IB 0

LI V(BR)EBO

IE=100μA, IC=0

MI ICBO

V= CB=40 V , IE 0

TED ICEO

= VCB= 20V , I E 0

Min

Typ

40

25

5

Max

0.1

0.1

Unit

V

V

V

μA

μA

Emitter cut-off current

IEBO

= VEB= 5V , IC 0

0.1 μA

DC current gain

HFE(1)

VCE= 1V, I C= 50mA

120

350

HFE(2)

VCE= 1V, I C= 500mA

50

Collector-emitter saturation voltage

VCE(sat)

I=500 mA, IB= 50mA

0.6

V

Base-emitter saturation voltage

Transition frequency

CLASSIFICATION OF hFE(1)

Rank

Range

VBE(sat)

fT

IC=500 mA, IB= 50mA

VCE= 6V, I C= 20mA

f=30MHz

L

120-200

1.2

V

150

MHz

H

200-350

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