S8050 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
部品番号
コンポーネント説明
メーカー
S8050 Datasheet PDF : 2 Pages
| |||
RoHS
S8050
S8050 TRANSISTOR (NPN)
D FEATURES
T Power dissipation
.,L PCM:
0.625 W (Tamb=25℃)
Collector current
ICM:
0.5 A
O Collector-base voltage
V(BR)CBO:
40 V
C Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
40
O Collector-emitter breakdown voltage V(BR)CEO
Ic= 0.1mA, IB=0
25
R Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
T Collector cut-off current
ICBO
VCB= 40V, IE=0
C Collector cut-off current
ICEO
VCE= 20V, IB=0
E Emitter cut-off current
IEBO
VEB= 5V, IC=0
L DC current gain
hFE(1)
hFE(2)
VCE= 1V, IC= 50mA
85
VCE= 1V, IC= 500mA
50
E Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=50 mA
J Base-emitter saturation voltage
ETransition frequency
WCLASSIFICATION OF hFE(1)
VBE(sat)
IC=500mA, IB=50 mA
fT
VCE= 6 V, IC=20mA
f =30MHz
150
MAX
0.1
0.1
0.1
300
0.6
1.2
UNIT
V
V
V
µA
µA
µA
V
V
MHz
Rank
B
C
D
Range
85-160
120-200
160-300
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:wej@yongerjia.com
Share Link: 