2N5551 データシートの表示（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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2N5551 Datasheet PDF : 4 Pages
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2N5551
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● General Purpose Switching Application
TO- 9 2
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
180
Collector-Emitter Voltage
160
Emitter-Base Voltage
6
Collector Current
0.6
Collector Power Dissipation
625
Thermal Resistance From Junction To Ambient
200
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
E BC
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
hFE(1)
DC current gain
hFE(2)
hFE(3)
Collector-emitter saturation voltage
VCE(sat)（1）
VCE(sat)（2）
Base-emitter saturation voltage
VBE (sat)（1）
VBE (sat)（2）
Collector output capacitance
Cob
Emitter input capacitance
Cib
Transition frequency
fT
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=120V,IE=0
VEB=4V,IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCB=10V,IE=0, f=1MHz
VBE=0.5V,IC=0, f=1MHz
VCE=10V,IC=10mA, f=100MHz
CLASSIFICATION OF hFE
RANK
RANGE
80-100
A
100-150
B
150-200
Min Typ Max Unit
180
V
160
V
6
V
50
nA
50
nA
80
80
300
50
0.15
V
0.2
V
1
V
1
V
6
pF
20
pF
100
300 MHz
C
200-300
High Diode Semiconductor
1
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