BDT82 データシートの表示（PDF） - New Jersey Semiconductor

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BDT82

Silicon PNP Power Transistors

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon PNP Power Transistors

BDT82/84/86/88

DESCRIPTION

• DC Current Gain -hFE = 40(Min)@ lc= -5A

• Collector-Emitter Sustaining Voltage-

: VCEO(sus) = -60V(Min)- BDT82; -80V(Min)- BDT84;

-100V(Min)- BDT86; -120V(Min)- BDT88

• Complement to Type BDT8 1/83/85/87

APPLICATIONS

• Designed for use in audio output stages and general amplifer

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

SYMBOL

PARAMETER

VALUE

UNIT

BDT82

-60

BDT84

-80

VCBO Collector-Base Voltage

V

BDT86

-100

BDT88

-120

BDT82

-60

BDT84

-80

VCEO Collector-Emitter Voltage

V

BDT86

-100

BDT88

-120

VEBO Emitter-Base Voltage

-7

V

Ic

Collector Current-Continuous

-15

A

I CM

Collector Current-Peak

-20

A

IB

Base Current

Collector Power Dissipation

PC

-4

A

125

W

T]

Junction Temperature

150

°C

Tstg

Storage Temperature Range

-65-150 'C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Rth j-a

Thermal Resistance.Junction to Case

Thermal Resistance.Junction to Ambient

MAX

1

70

UNIT

"CM/

'C/W

, ,-H

™

ilI

PIN 1.BASE

2. COLLECTOR

TO-220C package

, B—

/-'

'J° J-ert

A

— 1500

MLOOV

L

\m •1 B 'sei e

K [I

D

*

.J

C

DIMI MIN MAX

A 15.70 15.90

B 9.90 10.10

Cr\

4.20 4.40

0 70 090

3.40 3.60

G 498 5.18

H 2.70 2.90

I 0.44 0.46

K 13.20 13.40

L 1.10 1.30

n 270 2.90

R 2.50 2.70

s 1.29 1.31

u 6.45 6.65

V 8.66 8.86

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