C4550 データシートの表示（PDF） - New Jersey Semiconductor
部品番号
コンポーネント説明
メーカー
C4550 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Ona.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4550
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(susr 60V(Min)
• High DC Current Gain-
: hFE- 100(Min)@ (VCE= 2V , lc= 1.5A)
• Low Saturation Voltage-
: VCE(sat)= 0.3V(Max)@ (lc= 4A, |B= 0.2A)
APPLICATIONS
• Designed for use as a driver in DC/DC converters and
actuators.
F
ABSOLUTE MAXIMUM RATINGS(Ta=25°C )
SYMBOL
PARAMETER
VALUE UNIT
2
N
123
1
L^
3
PIN 1.BASE
2. COLLECTOR
3.BW1ITTER
TO-220F package
B-
- C-
-S-
t
1
-'
U
- .V
A
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
100
V
L ' " .. . - R -
K
60
V
VEBO
Emitter-Base Voltage
7.0
V
Ic
Collector Current-Continuous
7.0
A
I CM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
3.5
A
Total Power Dissipation @Tc=25°C
30
PT
W
lotai rower Dissipation (eg I a-25 i_
2.0
Tj
Junction Temperature
Tstg
Storage Temperature
150
•c
-55-150 •c
- -o
j -„
- N-
mm
DIM MIN MAX
A 14.95 15.05
B 10.00 10.10
C 4.40 4.60
D 0.75 0.80
F 3.10 3.30
K 3.70 3.90
J 0.50 0.70
K 13.4 13.6
L 1.10 1.30
N 5.00 5.20
fl 2.70 2.90
R 2.20 2.40
S 2.65 2.85
U 6.40 6.60
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use."
N.I Semi-Conductors encourages customers to verily that datasheets are current before placingorders.
Qualify Semi-Conductors
Share Link: 