CFB810 データシートの表示（PDF） - Continental Device India Limited
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CFB810 Datasheet PDF : 2 Pages
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CFB810
(9AW)
TO-220FP
MARKING:- CFB
810
Designed for Relay Drive and Motor Drive
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
110
Collector -Emitter Voltage
VCEO
110
Emitter Base Voltage
VEBO
5.0
Collector Current
IC
8.0
t=50ms
ICP
12
Base Current
IB
1.0
Collector Power Dissipation @ Ta=25 deg C PC
2.0
Collector Power Dissipation @ Tc=25 deg C
60
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN TYP
Collector Emitter Voltage
VCEO IC=5mA, IB=0
110
-
Collector Cut off Current
ICBO VCB=110V, IE=0
-
-
Emitter Cut off Current
IEBO VEB=5V,IC=0
-
-
Collector Emitter Saturation Voltage
VCE(Sat) IC=5A,IB=5mA
-
-
DC Current Gain
hFE
IC=2A, VCE=3V
1.0
-
IC=8A, VCE=3V
1.0
-
Dynamic Characteristics
Transition Frequency
ft
VCE=12V,IC=0.5A,
-
100
Collector Output Capacitance
Cob
VCB=10V, IE=0
-
110
f=1MHz
MAX
-
100
3.0
2.5
20
-
-
-
UNIT
V
V
V
A
A
A
W
W
deg C
deg C
UNIT
V
uA
mA
V
K
K
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 2
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