MA729WS データシートの表示（PDF） - Semtech Electronics LTD.
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MA729WS Datasheet PDF : 3 Pages
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MA729WS
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Applications
• Super-high speed switching circuit
• Small current rectification
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
SZ
Top View
Marking Code: "SZ"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Reverse Voltage
VR
30
V
Average Forward Current
IO
200
mA
Maximum (Peak) Forward Current
Non-repetitive Peak Forward Surge Current 1)
IFM
300
mA
IFSM
1
A
Junction Temperature
TJ
150
OC
Storage Temperature Range
Ts
- 55 to + 150
OC
1) The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 200 mA
Reverse Current
at VR = 30 V
Terminal Capacitance
at f = 1 MHz
Reverse Recovery Time
at IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω
Symbol
Typ.
Max.
Unit
VF
-
0.55
V
IR
-
50
µA
CT
30
-
pF
trr
3
-
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
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