BAV70SRA データシートの表示（PDF） - NexFlash -> Winbond Electronics
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BAV70SRA Datasheet PDF : 12 Pages
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Nexperia
BAV70SRA
Quad high-speed switching diodes
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
VR
reverse voltage
Tj = 25 °C
IF
forward current
single diode loaded; Tamb = 25 °C
[1]
double diodes loaded; Tamb = 25 °C
[1]
IFSM
non-repetitive peak
tp = 100 µs; Tj(init) = 25 °C; square wave
forward current
tp = 1 ms; Tj(init) = 25 °C; square wave
tp = 1 s; Tj(init) = 25 °C; square wave
IFRM
repetitive peak forward tp ≤ 0.5 ms; δ ≤ 0.25
current
Per device; one diode loaded
Ptot
total power dissipation Tamb ≤ 25 °C
[1]
[2]
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max
-
100
-
355
-
210
-
4
-
1.5
-
0.5
-
1
-
410
-
610
-
150
-55 150
-65 150
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for cathode 1cm2.
Unit
V
mA
mA
A
A
A
A
mW
mW
°C
°C
°C
0.4
IF
(1)
(A)
0.3
aaa-025705
(2)
0.2
0.1
Fig. 1.
(1) single diode loaded
(2) double diode loaded
0
0 25 50 75 100 125 150 175
Tamb (°C)
Forward current as a function of ambient temperature; derating curve
BAV70SRA
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 September 2018
© Nexperia B.V. 2018. All rights reserved
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