BAS516 データシートの表示（PDF） - Shanghai Leiditech Electronic Technology Co., Ltd
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BAS516 Datasheet PDF : 3 Pages
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Silicon Epitaxial Planar Switching Diode
Features
• Fast switching speed
• Ultra-small surface mount package
• For general purpose switching applications
• High conductance
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Forward Continuous Current
Non-repetitive Peak Forward Surge Current
Power Dissipation
at t = 1 µs
at t = 100 ms
Thermal Resistance Junction to Ambient Air
Operating Temperature Range
Storage Temperature Range
BAS516
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
1
2
T4
Top View
Marking Code: "T4"
Simplified outline SOD-523 and symbol
Symbol
VRM
VR
IF(AV)
IFM
IFSM
Ptot
RèJA
Tj
Tstg
Value
100
75
125
250
2
1
150
833
- 65 to + 150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
OC/W
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
Peak Reverse Current
at VR = 75 V
at VR = 20 V
at VR = 75 V, TJ = 150 OC
at VR = 25 V, TJ = 150 OC
Total Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω
Symbol
Min.
Max.
Unit
-
0.715
VF
-
0.855
V
-
1
-
1.25
-
1
µA
IR
-
25
nA
-
50
µA
-
30
µA
CT
-
2
pF
trr
-
4
ns
Rev :01.06.2018
1/3
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