DHG20I1200PA データシートの表示（PDF） - IXYS CORPORATION
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DHG20I1200PA Datasheet PDF : 4 Pages
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DHG 20 I 1200 PA
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
VRRM =
IFAV =
t rr =
preliminary
1200 V
20 A
200 ns
Part number
DHG 20 I 1200 PA
3
1
Backside: cathode
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: TO-220
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol Definition
Conditions
min. typ. max.
VRRM
IR
VF
max. repetitive reverse voltage
reverse current
forward voltage
VR = 1200 V
VR = 1200 V
IF = 20 A
IF = 40 A
IF = 20 A
IF = 40 A
TVJ = 25 °C
TVJ = 25°C
TVJ = 125 °C
TVJ = 25°C
TVJ = 125°C
1200
30
0.4
2.24
2.90
2.25
3.17
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
average forward current
rectangular
threshold voltage
slope resistance
for power loss calculation only
d = 0.5
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
t = 10 ms (50 Hz), sine
reverse recovery time
IF = 20 A; VR = 600 V
-diF/dt = 400 A/µs
TC = 95°C
TVJ = 150 °C
TC = 25°C
TVJ = 45°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
20
1.25
45
0.90
-55
150
140
150
15
20
200
350
CJ
junction capacitance
VR = 600 V; f = 1 MHz
TVJ = 25°C
8
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110616a
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