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IXGH10N100U1 データシートの表示(PDF) - IXYS CORPORATION

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IXGH10N100U1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
IXGH 10N100U1
IXGH 10N100AU1
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
20
18 TJ = 25°C
16
14
12
10
8
6
4
2
0
0
1
VGE = 15V
13V
11V
9V
7V
2
3
4
5
VCE - Volts
80
TJ = 25°C
70
60
VGE = 15V
13V
50
40
11V
30
9V
20
10
7V
0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 TJ = 25°C
8
7
6
5
IC = 20A
4
IC = 10A
3
2
IC = 5A
1
0
5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
VGE = 15V
1.4
1.3
IC = 20A
1.2
1.1
IC = 10A
1.0
0.9
IC = 5A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 5 Input Admittance
20
18
VCE = 10V
16
14
12
10
8
6
4
2
0
0123
TJ = 125°C
TJ = 25°C
TJ = - 40°C
4 5 6 7 8 9 10
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
1.2
VGE(th)
IC = 250µA
1.1
1.0
0.9
BVCES
0.8
IC = 3mA
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
VGE - Volts
10N100p1.JNB
TJ - Degrees C
© 1997 IXYS All rights reserved

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