IXGH10N100U1 データシートの表示（PDF） - IXYS CORPORATION
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IXGH10N100U1 Datasheet PDF : 6 Pages
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Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
900
7
850 TJ =125°C
RG=150Ω
800
750
6
Eoff
5
4
700
3
650
tfi
2
600
1
4 6 8 10 12 14 16 18 20 22
IC - Amperes
Fig.9 Gate Charge Characteristic Curve
15
IC = 10A
VCE = 800V
12
9
6
3
0
0
10
20
30
40
50
Qg - nCoulombs
Fig.11 Transient Thermal Impedance
IXGH 10N100U1
IXGH 10N100AU1
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on R
G
1000
5
TJ =125°C
800
IC = 10A
4
tfi
600
3
Eoff
400
2
200
1
0
0
20 40 60 80 100 120 140 160
RG - Ohms
Fig.10 Turn-Off Safe Operating Area
10
TJ = 125°C
RG = 150Ω
1
dV/dt < 3V/ns
0.1
0.01
0
200 400 600 800 1000
VCE - Volts
1
D=0.5
D=0.2
D=0.1
0.1 D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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