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DSA50C100QB データシートの表示(PDF) - IXYS CORPORATION

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DSA50C100QB
IXYS
IXYS CORPORATION IXYS
DSA50C100QB Datasheet PDF : 4 Pages
1 2 3 4
DSA 50 C 100 QB
70
60
50
IF 40
[A] 30
20
10
TVJ =
150°C
125°C
25°C
10
TVJ=175°C
1 150°C
IR
125°C
0.1 100°C
[mA]
75°C
0.01
50°C
0.001 25°C
1000
800
CT 600
[pF] 400
200
TVJ = 25°C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF [V]
Fig. 1 Maximum forward voltage
drop characteristics
0.0001
0
20 40 60 80 100
VR [V]
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
0
0 20 40 60 80 100
VR [V]
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
80
70
70
60
60
DC
d = 0.5
50
IF(AV) 50
P(AV) 40
d=
40
[A]
30
20
DC
[W] 30
0.5
0.33
0.25
20
0.17
0.08
10
10
0
0
50 100 150 200
TC [°C]
Fig. 4 Average forward current
IF(AV) vs. case temperature TC
0
0 10 20 30 40 50 60 70
IF(AV) [A]
Fig. 5 Forward power loss
characteristics
1.0
0.8
0.6
ZthJC
0.4
[K/W]
0.2
Single Pulse
0.0
0.0001
0.001
0.01
0.1
t [s]
Fig. 6 Transient thermal impedance junction to case
Rthi [K/W] ti [s]
0.026 0.0005
0.172 0.011
0.227 0.072
0.435 0.34
0.09 1.5
1
10
Note: All curves are per diode
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20101129a

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