RB551V-30 データシートの表示（PDF） - Semtech Electronics LTD.
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RB551V-30 Datasheet PDF : 3 Pages
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RB551V-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Ultra low VF
• High reliability
Applications
• High frequency rectification switching regulation
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
SA
Top View
Marking Code: "SA"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
at IF = 500 mA
Reverse Current
at VR = 20 V
Note: ESD sensitive product handling required.
Symbol
Value
Unit
VRM
30
V
VR
20
V
IO
0.5
A
IFSM
2
A
Tj
125
OC
Ts
- 40 to + 125
OC
Symbol
Max.
Unit
VF
0.36
V
0.47
IR
100
µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
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