RB551V-30 データシートの表示（PDF） - ROHM Semiconductor

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RB551V-30

Schottky Barrier Diode

ROHM Semiconductor 

Schottky Barrier Diode

RB551V-30

lApplication

High frequency rectification

lDimensions (Unit : mm)

1.25±0.1

0.1±0.1

　　　 0.05

Datasheet

lLand size figure (Unit : mm)

0.9MIN.

lFeatures

1) Small mold type. (UMD2)

2) Low VF

3) High reliability.

for UMD2

lStructure

d lConstruction

de Silicon epitaxial planar

0.3±0.05

0.7±0.2

　　　 0.1

ROHM : UMD2 JEITA : SC-90/A

JEDEC :SOD-323

dot (year week factory)

lTaping specifications (Unit : mm)

4.0±0.1 2.0±0.05

φf11..5555±00.0.055

mmeensigns 1.40±0.1

4.0±0.1

φf11..0055

o D lAbsolute maximum ratings (Ta= 25°C)

c Parameter

Symbol

Limits

Unit

e w Reverse voltage (repetitive peak)

VRM

30

V

R e Reverse voltage (DC)

VR

20

V

Average rectified forward current

Io

500

mA

t N Forward current surge peak (60Hz・1cyc) IFSM

2

A

o Junction temperature

Tj

125

°C

NStorage temperature

Tstg

-40 to +125

°C

Cathode

Anode

0.3±0.1

1.0±0.1

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol Min. Typ. Max.

Forward voltage

VF1

-

- 0.36

VF2

-

- 0.47

Reverse current

IR

-

- 100

Unit

Conditions

V IF=100mA

V IF=500mA

mA VR=20V

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2015.01 - Rev.E

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