BAS70W データシートの表示（PDF） - Transys Electronics Limited

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BAS70W

SCHOTTKY DIODE

Transys Electronics Limited 

BAS70W SERIES SCHOTTKY DIODE

FEATURES

Power dissipation

PD:

200 mW (Tamb=25℃)

Collector current

IF:

70 mA

Collector-base voltage

VR:

70 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-323

1. BASE

2. EMITTER

3. COLLECTOR

1. 25¡ À0. 05

2. 30¡ À0. 05

Unit: mm

BAS70W Marking: K73 BAS70W-04 Marking: K74

BAS70W-05 Marking: K75

BAS70W-06 Marking: K76

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

Diode capacitance

Reveres recovery time

Symbol

V(BR) R

IR

VF

CD

trr

Test conditions

IR= 10µA

VR=50V

IF=1mA

IF=15mA

VR=0V, f=1MHz

IF=10mA through

IR=10mA to IR=1mA

MIN

MAX

70

100

410

1000

2

5

UNIT

V

nA

mV

pF

nS

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