IXBF50N360 データシートの表示（PDF） - IXYS CORPORATION
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IXBF50N360 Datasheet PDF : 6 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
IC = 50A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 1000V
td(on)
tr
td(off)
tf
Resistive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 960V, RG = 5
td(on)
tr
Resistive load, TJ = 125°C
IC = 50A, VGE = 15V
td(off)
VCE = 960V, RG = 5
tf
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
24
40
S
3990
pF
195
pF
100
pF
210
nC
27
nC
77
nC
46
ns
420
ns
205
ns
1750
ns
44
ns
845
ns
210
ns
1670
ns
0.43 °C/W
0.15
°C/W
IXBF50N360
ISOPLUS i4-PakTM (HV) Outline
E
A
Q A2
U
S
D
12
R
L1
3
T
4
L
e
e1
c
A1
b1 b
Pin 1 = Gate
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
IF = 50A, VGE = 0V, Note 1
trr
IF = 25A, VGE = 0V, -diF/dt = 100A/μs
IRM
VR = 100V, VGE = 0V
QRM
Characteristic Values
Min. Typ. Max
3.0 V
1.7
μs
48
A
40
μC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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