BC308 データシートの表示（PDF） - Unspecified
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BC308 Datasheet PDF : 3 Pages
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Switching and Amplifier Applications
.Low Noise: BC309
BC307/308/309
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage
:BC307
:BC308/309
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Emitter Voltage
:BC307
:BC308/309
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25℃ unless otherwise noted
Symbol Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
:BC307
:BC308/309
Ic=-2mA, IB=0
BVCES
Collector-Emitter Breakdown Voltage
:BC307
:BC308/309
Ic=-10µA, VBE=0
BVEBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Cib
NF
Emitter-Base Breakdown Voltage
Collector Cut-off Current
:BC307
:BC308/309
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
:BC307/308
:BC309
:BC309
IE=-10µA, IC=0
VCE=-45V, VBE=0
VCE=-25V,VBE=0
VCE=-5V, IC=-2mA
Ic=-10mA, IB=-0.5mA
Ic=-100mA, IB=-5mA
Ic=-10mA, IB=-0.5mA
Ic=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, Ic=-10mA, f=50MHz
VCB=-10V, IE=0, f=1MHz
VEB=-0.5V, IC=0, f=1MHz
VCE=-5V, IC=-0.2mA,
RG=2kΩ, f=1KHz
VCE=-5V, Ic=-0.2mA
RG=2K Ω, f=30~15kHz
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Value
-50
-30
-45
-25
-5
-100
500
150
-55~150
Units
V
V
V
V
V
mA
mW
℃
℃
Min. Typ. Max. Units
-45
V
-25
V
-50
V
-30
V
-5
V
-2
-15
-2
-15
120
800
-0.3
-0.5
-0.7
-0.85
-0.55 -0.62 -0.7
130
6
12
nA
nA
V
V
V
V
V
MHz
pF
pF
10
dB
4
dB
2
4
dB
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