DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NE661M04 データシートの表示(PDF) - California Eastern Laboratories.

部品番号
コンポーネント説明
メーカー
NE661M04
CEL
California Eastern Laboratories. CEL
NE661M04 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
NE661M04
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
15
VCEO Collector to Emitter Voltage V
3.3
VEBO Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
12
PT
Total Power Dissipation
mW
39
TJ
Junction Temperature
°C
150
TSTG Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
THERMAL RESISTANCE
ITEM
SYMBOL VALUE UNIT
Junction to Case Resistance
Junction to Ambient Resistance
Rth j-c
Rth j-a
240 °C/W
650 °C/W
TYPICAL OPTIMAL NOISE MATCHING (TA = 25˚C)
VC = 1 V, lC = 1 mA
1.0
0.5
2.0
ΓOPT
0.2
5.0
0
0.2
0.5 1.0 2.0
5.0
0
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(GHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG
ANG
Rn/50
VC = 1 V, IC = 1 mA
0.50
1.08
21.40 0.67
13
0.60
0.90
1.13
18.90 0.64
31
0.64
1.00
1.14
18.40
0.64
33
0.64
1.50
1.20
15.70
0.63
43
0.64
2.00
1.29
14.20
0.62
50
0.62
2.50
1.40
13.20
0.61
59
0.55
3.00
1.55
12.50
0.60
67
0.45
VC = 2 V, IC = 1 mA
0.50
1.12
21.70 0.69
13
0.57
0.90
1.15
19.50 0.66
26
0.56
1.00
1.16
19.10
0.65
30
0.55
1.50
1.23
16.50
0.64
37
0.69
2.00
1.32
14.70
0.64
46
0.68
2.50
1.45
13.90
0.63
60
0.55
3.00
1.60
13.30
0.62
69
0.52
VC = 2 V, IC = 5 mA
0.50
1.69
27.41 0.41
14
0.60
0.90
1.70
23.80 0.41
30
0.64
1.00
1.70
23.00
0.41
34
0.64
1.50
1.72
20.24
0.40
40
0.64
2.00
1.75
17.93
0.39
47
0.62
2.50
1.79
16.77
0.38
55
0.55
3.00
1.85
16.30
0.36
64
0.45
VC = 2 V, lC = 1 mA
1.0
0.5
2.0
ΓOPT
0.2
5.0
0
0.2
0.5 1.0 2.0
5.0
0
-0.2
-5.0
-0.2
-5.0
-0.5
-2.0
-1.0
-0.5
-2.0
-1.0
VC = 2 V, lC = 5 mA
1.0
0.5
2.0
0.2
ΓOPT
5.0
0
0.2
0.5 1.0
2.0 5.0
0
-0.2
-5.0
-0.5
-2.0
-1.0

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]