2N7002 データシートの表示（PDF） - Shenzhen Luguang Electronic Technology Co., Ltd
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2N7002 Datasheet PDF : 2 Pages
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2N7002
Mosfet (N-Channel)
Features
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
1. GATE
2. SOURCE
3. DRAIN
SOT-23
Marking: 7002 / 702
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS
Drain-Source voltage
60
V
ID
Drain Current
115
mA
PD
Power Dissipation
225
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING TIME
Turn-on Time
Turn-off Time
Symbol
Test conditions
V(BR)DSS
Vth(GS)
lGSS
IDSS
ID(ON)
rDS(0n)
gfs
VDS(on)
VSD
Ciss
COSS
CrSS
VGS=0 V, ID=10 μA
VDS=VGS, ID=250 μA
VDS=0 V, VGS=±25 V
VDS=60 V, VGS=0 V
VGS=10 V, VDS=7 V
VGS=10 V, ID=500mA
VGS=5 V, ID=50mA
VDS=10 V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA, VGS=0 V
VDS=25V, VGS=0V, f=1MHz
td(on)
td(off)
VDD=25 V, RL=50Ω
ID=500mA,VGEN=10 V
RG=25 Ω
MIN
TYP
MAX UNIT
60
V
1
2.5
±80
nA
80
nA
500
mA
1
7.5
Ω
1
7.5
80
500
ms
0.5
3.75
V
0.05
0.375
V
0.55
1.2
V
50
25
pF
5
20
ns
40
Revision:20170701-P1
http://www.lgesemi.com
mail:lge@lgesemi.com
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