2N7002 データシートの表示（PDF） - Unspecified
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2N7002 Datasheet PDF : 2 Pages
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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=60V,ID=0.115A,RDS(ON)<5Ω@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
2N7002
D
GS
Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-
Continuous Drain Current-TC=100℃
Power Dissipation
Operating and Storage Junction Temperature Range
Ratings
60
±20
0.115
---
0.225
-55 to +150
Thermal Characteristics：
Units
V
V
A
W
℃
Symbol
RƟJA
Parameter
Thermal Resistance,Junction to Ambient
Max
Units
556
℃/W
Package Marking and Ordering Information：
Part NO.
2N7002
Marking
7002
www.doingter.cn
—1—
Package
SOT-23
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