MGF1601B データシートの表示（PDF） - MITSUBISHI ELECTRIC
部品番号
コンポーネント説明
メーカー
MGF1601B Datasheet PDF : 4 Pages
| |||
< High-power GaAs FET (small signal gain stage) >
MGF1601B
S to X BAND / 0.15W
non - matched
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package assures
minimum parasitic lasses, and has a configuration suitable for
microstrip circuits.
FEATURES
High linear power gain
Glp=8.0dB @f=8GHz
High P1dB
P1dB=21.8dBm(TYP.) @f=8GHz
APPLICATION
S to X Band medium-power amplifiers and oscillators
QUALITY
GG
RECOMMENDED BIAS CONDITION
VDS=6V,Id=100mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
Gate to drain breakdown voltage
Gate to source breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-8
-8
250
-0.6
1.5
1.2
175
-65 to +175
Unit
V
V
mA
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
V(BR)GDO
V(BR)GSO
IGSS
IDSS
VGS(off)
gm
GLP
P1dB
Rth(ch-c)
Gate to drain breakdown voltage
Gate to source breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Linear Power Gain
Output power at 1dB gain compression
Thermal resistance *1
Ig=200A
Ig=200A
VDS=0V,VGS=-3V
VDS=3V,VGS=0V
VDS=3V,ID=100A
VDS=3V,ID=100mA
VDS=6V,ID=100mA,f=8GHz
VDS=6V,ID=100mA,f=8GHz
ΔVf method
*1:Channel to ambient
Publication Date : Apr., 2011
1
Limits
Min.
Typ.
Max.
-8
-
-
-8
-
-
-
-
20
150
200
250
-1.5
-
-4.5
70
90
-
6
8
-
20.8
21.8
-
-
-
125
Unit
V
V
A
mA
V
mS
dB
dBm
℃/W
Share Link: 