MRF10501 データシートの表示（PDF） - Motorola => Freescale

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MRF10501

Microwave pulse power transistor

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF Line

Microwave Pulse

Power Transistors

. . . designed for 1025 – 1150 MHz pulse common base amplifier applications

such as TCAS, TACAN and Mode–S transmitters.

• Guaranteed Performance @ 1090 MHz

Output Power = 500 Watts Peak

Gain = 8.5 dB Min, 9.0 dB (Typ)

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Hermetically Sealed Industry Package

• Silicon Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input and Output Matching

• Characterized with 10 µs, 1% Duty Cycle Pulses

Order this document

by MRF10500/D

MRF10500

MRF10501

500 W (PEAK)

1025 – 1150 MHz

MICROWAVE POWER

TRANSISTORS

NPN SILICON

CASE 355D–02, STYLE 1

MRF10500

CASE 355H–01, STYLE 1

MRF10501

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Peak (1)

Total Device Dissipation @ TC = 25°C (1), (2)

Derate above 25°C

VCES

VCBO

VEBO

IC

PD

65

65

3.5

29

1460

8.3

Vdc

Vdc

Vdc

Adc

Watts

W/°C

Storage Temperature Range

Junction Temperature

THERMAL CHARACTERISTICS

Tstg

– 65 to + 200

°C

TJ

200

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (3)

RθJC

0.12

°C/W

NOTES:

1. Under pulse RF operating conditions.

2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF

amplifiers.

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value

measured @ 32 µs, 2%.)

REV 6

©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA

MRF10500 MRF10501

2–1

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