REF191GBC データシートの表示（PDF） - Analog Devices
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REF191GBC Datasheet PDF : 23 Pages
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REF19x Series
REF195–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = +5.20 V, –40؇C ≤ TA ≤ +125؇C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
TEMPERATURE COEFFICIENT1, 2
“E” Grade
TCVO/°C
IOUT = 0 mA
2
“F” Grade
5
“G” Grade3
10
LINE REGULATION4
“E” Grade
“F & G” Grades
LOAD REGULATION4
“E” Grade
“F & G” Grades
∆VO /∆VIN
5.20 V ≤ VS ≤ 15 V, IOUT = 0 mA
5
10
∆VO /∆VLOAD
VS = 6.45 V, 0 ≤ IOUT ≤ 20 mA
5
10
DROPOUT VOLTAGE
VS – VO
VS = 5.60 V, ILOAD = 10 mA
VS = 6.45 V, ILOAD = 20 mA
NOTES
1For proper operation, a 1 µF capacitor is required between the output pin and the GND pin of the device.
2TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/ °C.
TCVO = (V max–V min)/VO (TMAX–TMIN).
3Guaranteed by characterization.
4Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
Max
0.60
1.45
Units
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
REF196–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = +3.5 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
INITIAL ACCURACY1
“G” Grade
LINE REGULATION2
“G” Grades
LOAD REGULATION2
“G” Grade
VO
IOUT = 0 mA
∆VO /∆VIN
3.50 V ≤ VS ≤ 15 V, IOUT = 0 mA
∆VO /∆VLOAD VS = 5.0 V, 0 ≤ IOUT ≤ 30 mA
3.290 3.3
4
6
DROPOUT VOLTAGE
VS – VO
VS = 4.1 V, ILOAD = 10 mA
VS = 4.3 V, ILOAD = 30 mA
LONG-TERM STABILITY3
∆VO
1000 Hours @ +125°C
1.2
NOISE VOLTAGE
eN
0.1 Hz to 10 Hz
33
NOTES
1Initial accuracy includes temperature hysteresis effect.
2Line and load regulation specifications include the effect of self-heating.
3Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at +125 °C, with an LTPD of 1.3.
Specifications subject to change without notice.
Max
3.310
8
15
0.80
1.00
Units
V
ppm/V
ppm/mA
V
V
mV
µV p-p
–10–
REV. D
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