RMB2S データシートの表示（PDF） - General Semiconductor

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RMB2S

MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER

General Semiconductor 

RATINGS AND CHARACTERISTIC CURVES RMB2S THRU RMB6S

FIG. 1 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

0.8

0.7

GLASS

0.6 EPOXY

P.C.B.

0.5

0.4

0.3

0.2

0.1

0

0

RESISTIVE OR INDUCTIVE LOAD

20 40 60 80 100 120 140 160

AMBIENT TEMPERATURE, °C

FIG. 3 - TYPICAL FORWARD VOLTAGE

CHARACTERISTICS PER LEG

10

TJ=150°C

1

TJ=25°C

0.1

PULSE WIDTH=300µs

1% DUTY CYCLE

0.01

0.2

0.4 0.6 0.8

1.0 1.2 1.4

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE

CURRENT PER LEG

35

TA=40°C

SINGLE HALF SINE-WAVE

30

(JEDEC Method)

25

20

f=60 HZ

15

10

1.0 CYCLE

f=50 HZ

5.0

0

1

10

100

NUMBER OF CYCLES

FIG. 4 - TYPICAL REVERSE LEAKAGE CHARACTERISTICS

PER LEG

100

10

TJ=125°C

1

0.1

0.01

0

TJ=25°C

20 40 60 80 100 120 140 160

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

30

25

20

15

10

5.0

0

0.1

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

PER LEG

TJ=25°C

f=1.0 MHZ

Vsig=50mVp-p

1

10

REVERSE VOLTAGE, VOLTS

100 200

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