STB40NF10T4(2000) データシートの表示（PDF） - STMicroelectronics

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STB40NF10T4
(Rev.:2000)

N - CHANNEL 100V - 0.030Ω - 40A TO-263 LOW GATE CHARGE STripFET™ POWER MOSFET

STMicroelectronics 

®

STB40NF10

N - CHANNEL 100V - 0.030Ω - 40A TO-263

LOW GATE CHARGE STripFET™ POWER MOSFET

TYPE

VDSS

RDS(on )

ID

STB40NF10

100 V < 0.035 Ω

40 A

s TYPICAL RDS(on) = 0.030 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s APPLICATION ORIENTED

CHARACTERIZATION

s SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

DESCRIPTION

This MOSFET series realized with STMicroelec-

tronics unique STripFET process has specifically

been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency, high-frequen-

cy isolated DC-DC converters for Telecom and

Computer applications. It is also intended for any

applications with low gate drive requirements.

PRELIMINARY DATA

3

1

D2PAK

TO-263

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS

s UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

S ymb ol

Parameter

Va l u e

VDS Drain-source Voltage (VGS = 0)

100

VDGR Drain- gate Voltage (RGS = 20 kΩ)

100

VG S

ID

ID

I DM ( •)

Ptot

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

T otal Dissipation at Tc = 25 oC

± 20

40

25

160

140

Derating Factor

0.93

EAS (1) Single Pulse Avalanche Energy

135

Tstg Storage Temperature

-65 to 175

Tj Max. Operating Junction Temperature

175

(•) Pulse width limited by safe operating area

( 1) starting Tj = 25 oC, ID =40A , VDD = 50V

May 2000

Unit

V

V

V

A

A

A

W

W /o C

mJ

oC

oC

1/6

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