STB40NF10T4(2000) データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
STB40NF10T4
(Rev.:2000)
(Rev.:2000)
STMicroelectronics
STB40NF10T4 Datasheet PDF : 6 Pages
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STB40NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 20 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 80 V ID = 40 A VGS = 10 V
Min.
Typ.
28
63
Max.
Unit
ns
ns
60
80
nC
10
nC
23
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V
ID = 20 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
Vclamp = 80 V
ID = 40 A
RG = 4.7 Ω
VGS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
84
28
71
36
70
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 40 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 40 A
VDD = 50 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
114
456
8
Max.
40
160
1.5
Unit
A
A
V
ns
nC
A
3/6
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