STD15NF10 データシートの表示（PDF） - STMicroelectronics

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STD15NF10

N-channel 100V - 0.060Ω - 23A - DPAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STD15NF10

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD(2)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20A, VGS = 0

ISD = 24A,

di/dt = 100A/µs,

VDD = 30V, TJ = 150°C

Figure 14 on page 8

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

23 A

92 A

1.5 V

100

ns

375

µC

7.5

A

5/13

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