STQ1NE10L(2002) データシートの表示（PDF） - STMicroelectronics
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STQ1NE10L Datasheet PDF : 9 Pages
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STQ1NE10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 50 V
ID = 0.5 A
11
ns
RG = 4.7 Ω
VGS = 10 V
12
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
VDD= 80 V ID= 1 A VGS= 5 V
7
nC
Qgs
Gate-Source Charge
1.5
nC
Qgd
Gate-Drain Charge
3.5
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 50 V
ID = 0.5 A
RG = 4.7Ω,
VGS = 5 V
(Resistive Load, Figure 3)
Min.
Typ.
20
13
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 1 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 1 A di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
52
90
3.5
Max.
1
4
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance Junction-lead
3/9
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