STP7NE10 データシートの表示（PDF） - STMicroelectronics

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STP7NE10

N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET™ POWER MOSFET

STMicroelectronics 

®

STP7NE10

N - CHANNEL 100V - 0.3 Ω - 7A - TO-220

STripFET™ POWER MOSFET

TYPE

STP7NE10

VDSS

RDS(on)

ID

100 V < 0.4 Ω

7A

PRELIMINARY DATA

s TYPICAL RDS(on) = 0.3 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s AVALANCHE RUGGED TECHNOLOGY

s 100 % AVALANCHE TESTED

s APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique " Single Feature

Size™ " strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalanche charac-

teristics and less critical alignment steps therefore

a remarkable manufacturing reproducibility.

APPLICATIONS

s DC MOTOR CONTROL (DISK DRIVES,etc.)

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

October 1999

Value

100

100

± 20

7

4.9

28

45

0.3

6

-65 to 150

175

(1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W/oC

V/ns

oC

oC

1/5

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