STB40NF10L(2006) データシートの表示（PDF） - STMicroelectronics

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STB40NF10L
(Rev.:2006)

N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB40NF10L

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250µA, VGS =0

100

V

VDS = Max rating

VDS = Max rating,

TC = 125°C

1

µA

10

µA

VGS = ± 20V

±100 nA

VDS = VGS, ID = 250µA

1

1.7

2.5

V

VGS = 10V, ID = 20A

VGS = 5V, ID = 20A

0.028 0.033 Ω

0.030 0.036 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS = 15V, ID = 20A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 50V, ID = 20A

RG = 4.7Ω VGS = 4.5V

(see Figure 13)

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 80V, ID = 40A,

VGS = 4.5V, RG = 4.7Ω

(see Figure 14)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Min. Typ. Max. Unit

25

S

2300

pF

290

pF

125

pF

25

ns

82

ns

64

ns

24

ns

46

64

nC

12

nC

22

nC

4/13

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