STB30NS15 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

STB30NS15

N-CHANNEL 150V - 0.075 Ω - 30A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STMicroelectronics 

STB30NS15

N-CHANNEL 150V - 0.075 Ω - 30A D2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STB30NS15

150 V

<0.1 Ω

30 A

s TYPICAL RDS(on) = 0.075 Ω

s EXCEPTIONAL dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s APPLICATION ORIENTED

CHARACTERIZATION

s FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS

s UPS AND MOTOR CONTROL

3

1

D2PAK

TO-263

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM(•) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

EAS (2) Single Pulse Avalanche Energy

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

•) Pulse width limited by safe operating area.

October 2001

Value

150

150

± 20

30

21

120

110

0.73

2

250

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

-55 to 175

°C

(1) ISD ≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25 oC, ID = 15A, VDD = 25V

1/9

Share Link: