STD5N20 データシートの表示（PDF） - STMicroelectronics

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STD5N20

N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

STMicroelectronics 

®

STD5N20

N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252

POWER MOS TRANSISTOR

TYPE

V DSS

RDS(on)

ID

STD5N20

200 V < 0.8 Ω

5A

s TYPICAL RDS(on) = 0.7 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s 150oC OPERATING TEMPERATURE

s APPLICATION ORIENTED

CHARACTERIZATION

s THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

s SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s DC-DC CONVERTERS & DC-AC INVERTERS

s TELECOMMUNICATION POWER SUPPLIES

INDUSTRIAL MOTOR DRIVES

3

2

1

IPAK

TO-251

(Suffix ”-1”)

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

VDS

V DGR

VGS

ID

ID

Drain-source Volt age (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

G ate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

T otal Dissipation at Tc = 25 oC

Derating Factor

Ts tg Storage T emperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

March 1999

Value

200

200

± 20

5

3 .5

20

45

0. 36

-65 to 150

150

Un it

V

V

V

A

A

A

W

W /o C

oC

oC

1/10

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