IRF634 データシートの表示（PDF） - STMicroelectronics
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IRF634 Datasheet PDF : 14 Pages
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IRF634 - IRF634FP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
IRF634
IRF634FP
VDS Drain-source voltage (VGS = 0)
250
V
VDGR Drain-gate voltage (RGS = 20 kΩ)
250
V
VGS Gate- source voltage
± 20
V
ID
Drain current (continuos) at TC = 25°C
8
8(1)
A
ID
Drain current (continuos) at TC = 100°C
5
5(1)
A
IDM (2) Drain current (pulsed)
32
32(1)
A
PTOT
t(s) dv/dt (3)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
uc VISO
rod Tstg
P Tj
Insulation withstand voltage (DC)
Storage temperature
Max. operating junction temperature
te 1. Limited only by maximum temperature allowed
le 2. Pulse width limited by safe operating area
o 3. ISD ≤8A, di/dt ≤300 A/ms, VDD ≤V(BR)DSS, Tj ≤Tjmax
Obs Table 2. Thermal data
t(s) - Rthj-case Thermal resistance junction-case max
c Rthj-amb Thermal resistance junction-ambient max
rodu Tl
Maximum lead temperature for soldering
purpose
80
30
0.64
0.24
5
-
2000
–65 to 150
150
W
W/°C
V/ns
V
°C
°C
TO-220
TO-220FP
1.56
4.11
62.5
300
°C/W
°C/W
°C
te P Table 3. Avalanche characteristics
oleSymbol
Parameter
Max value
Unit
bs Avalanche current, repetitive or not-repetitive
O IAR
(pulse width limited by Tj max)
8
A
Single pulse avalanche energy
EAS
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
300
mJ
3/14
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