STB60NF03L データシートの表示（PDF） - STMicroelectronics

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STB60NF03L

N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET POWER MOSFET

STMicroelectronics 

®

STB60NF03L

N-CHANNEL 30V - 0.008 Ω - 60A D2PAK

STripFET™ POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STB60NF03L

30 V < 0.01 Ω 60 A

s TYPICAL RDS(on) = 0.008 Ω

s OPTIMIMIZED FOR HIGH SWITCHING

OPERATIONS

s LOW THRESHOLD DRIVE

s LOGIC LEVEL GATE DRIVE

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique ”Single Feature

Size™” strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalance

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

APPLICATIONS

s LOW VOLTAGE DC-DC CONVERTERS

s HIGH CURRENT, HIGH SPEED SWITCHING

s HIGH EFFICIENCY SWITCHING CIRCUITS

PRELIMINARY DATA

3

1

D2PAK

TO-263

ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

P a ramet er

Va l u e

VDS Drain-source Voltage (VGS = 0)

30

VDGR Drain- gate Voltage (RGS = 20 kΩ)

30

VGS G ate-source Volt age

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

± 20

60

42

IDM (•) Drain Current (pulsed)

240

Ptot T otal Dissipat ion at Tc = 25 oC

100

Derating Factor

0.67

EAS(1) Single Pulse Avalanche Energy

650

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

September 1999

-65 to 175

175

( 1) starting Tj = 25 oC, ID = 30A , VDD = 20V

Un it

V

V

V

A

A

A

W

W /o C

mJ

oC

oC

1/6

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