STB85NF3LL データシートの表示（PDF） - STMicroelectronics

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STB85NF3LL

N-channel 30V - 0.006Ω - 85A - D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB85NF3LL

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

VGSM

ID

ID

IDM(1)

PTOT

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20KΩ)

Gate-source voltage

Gate-source voltage pulsed

(tp ≤50µs; duty cycle 25%; TJ ≤150°C)

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Tstg Storage temperature

TJ Max. Operating Junction Temperature

1. Pulse width limited by safe operating area

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

30

30

± 16

± 20

85

60

340

110

0.73

–65 to 175

175

Value

0.36

62.5

300

Unit

V

V

V

V

A

A

A

W

W/°C

°C

°C

Unit

°C/W

°C/W

°C

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