STB85NF3LL データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

STB85NF3LL

N-channel 30V - 0.006Ω - 85A - D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB85NF3LL

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 85A, VGS = 0

ISD = 85A,

di/dt = 100A/µs,

VDD = 15V, TJ = 150°C

Figure 14 on page 8

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

85 A

340 A

1.3 V

65

ns

105

µC

3.4

A

5/13

Share Link: