STGD3NB60SDT4(2000) データシートの表示（PDF） - STMicroelectronics

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STGD3NB60SDT4
(Rev.:2000)

N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT

STMicroelectronics 

STGD3NB60SD

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING OFF

Symbol

tc

tr(voff)

td(off)

tf

Eoff(**)

tc

tr(voff)

td(off)

tf

Eoff(**)

Parameter

Test Conditions

Cross-Over Time

VCC = 480 V

Off Voltage Rise Time RGE = 1 kΩ

Delay Time

Fall Time

Turn-off Switching Loss

IC = 3 A

VGE = 15 V

Cross-Over Time

VCC = 480 V

Off Voltage Rise Time RGE = 1kΩ

Delay Time

Tj = 125 oC

Fall Time

Turn-off Switching Loss

IC = 3 A

VGE = 15 V

Min.

Typ.

1.8

1.0

3.4

0.72

1.15

2.8

1.45

3.6

1.2

1.8

Max.

Unit

µs

µs

µs

µs

mJ

µs

µs

µs

µs

mJ

COLLECTOR-EMITTER DIODE

Symbol

Parameter

Test Conditions

If

Forward Current

Ifm

Forward Current pulsed

Vf

Forward On-Voltage

If = 3 A

If = 1 A

trr

Reverse Recovery Time

If = 3 A

Qrr

Reverse Recovery Charge dI/dt = 100 A/µS

Irrm Reverse Recovery Current

(•) Pulse width limited by max. junction temperature

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(**)Losses Include Also The Tail (Jedec Standardization)

VR=200 V

Tj = 125 oC

Min.

Typ.

1.55

1.15

1700

4500

9.5

Max. Unit

3

A

25 A

1.9 V

V

ns

nC

A

Thermal Impedance

3/8

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